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VS-ST183C series www.vishay.com vishay semiconductors revision: 17-dec-13 1 document number: 94368 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 inverter grade thyristors (hockey puk version), 370 a features ? metal case with ceramic insulator ? all diffused design ? center amplifying gate ? international standard case to-200ab (a-puk) ? guaranteed high dv/dt ? guaranteed high di/dt ? high surge current capability ? low thermal impedance ? high speed performance ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications ?inverters ? choppers ? induction heating ? all types of force-commutated converters ? ? ? electrical specifications product summary package to-200ab (a-puk) diode variation single scr i t(av) 370 a v drm /v rrm 400 v, 800 v v tm 1.80 v i tsm at 50 hz 4900 a i tsm at 60 hz 5130 a i gt 200 ma t c /t hs 55 c to-200ab (a-puk) major ratings and characteristics parameter test conditions values units i t(av) 370 a t hs 55 c i t(rms) 690 a t hs 25 c i tsm 50 hz 4900 a 60 hz 5130 i 2 t 50 hz 120 ka 2 s 60 hz 110 v drm /v rrm 400 to 800 v t q range 10 to 20 s t j -40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = t j maximum ma VS-ST183C..c 04 400 500 40 08 800 900
VS-ST183C series www.vishay.com vishay semiconductors revision: 17-dec-13 2 document number: 94368 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 current carrying capability frequency units 50 hz 770 660 1220 1160 5450 4960 a 400 hz 730 600 1270 1090 2760 2420 1000 hz 600 490 1210 1040 1600 1370 2500 hz 350 270 860 730 800 680 recovery voltage v r 50 50 50 v voltage before turn-on v d v drm v drm v drm rise of on-state current di/dt 50 - - a/s heatsink temperature 405540554055c equivalent values for rc circuit 47/0.22 47/0.22 47/0.22 ?? f on-state conduction parameter symbol test conditions values units maximum average on-state current ? at heatsink temperature i t(av) 180 conduction, half sine wave ? double side (sin gle side) cooled 370 (130) a 55 (85) c maximum rms on-state current i t(rms) dc at 25 c heatsink temp erature double side cooled 690 a maximum peak, one half cycle, ? non-repetitive surge current i tsm t = 10 ms no voltage ? reapplied sinusoidal half wave, ? initial t j = t j maximum 4900 t = 8.3 ms 5130 t = 10 ms 100 % v rrm ? reapplied 4120 t = 8.3 ms 4310 maximum i 2 t for fusing i 2 t t = 10 ms no voltage ? reapplied 120 ka 2 s t = 8.3 ms 110 t = 10 ms 100 % v rrm ? reapplied 85 t = 8.3 ms 78 maximum i 2 ? t for fusing i 2 ? t t = 0.1 to 10 ms, no voltage reapplied 1200 ka 2 ? s maximum peak on -state voltage v tm i tm = 600 a, t j = t j maximum, ? t p = 10 ms sine wave pulse 1.80 v low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 1.40 high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 1.45 low level value of forward slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.67 m ? high level value of forward slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 0.58 maximum holding current i h t j = 25 c, i t > 30 a 600 ma typical latchi ng current i l t j = 25 c, v a = 12 v, r a = 6 ? , i g = 1 a 1000 180 el i tm 180 el i tm 100 s i tm
VS-ST183C series www.vishay.com vishay semiconductors revision: 17-dec-13 3 document number: 94368 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 switching parameter symbol test conditions values units maximum non-repetiti ve rate of rise ? of turned on current di/dt t j = t j maximum, v drm = rated v drm ? i tm = 2 x di/dt 1000 a/s typical delay time t d t j = 25 c, v dm = rated v drm , i tm = 50 a dc, t p = 1 s ? resistive load, gate pulse: 10 v, 5 ? source 1.1 s maximum turn-off time minimum t q t j = t j maximum, ? i tm = 300 a, commutating di/dt = 20 a/s ? v r = 50 v, t p = 500 s, dv/dt: see table in device code 10 maximum 20 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = t j maximum, linear to 80 % v drm , ? higher value available on request 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = t j maximum, rated v drm /v rrm applied 40 ma triggering parameter symbol test conditions values units maximum peak gate power p gm t j = t j maximum, f = 50 hz, d% = 50 60 w maximum average gate power p g(av) 10 maximum peak positi ve gate current i gm t j = t j maximum, t p ? 5 ms 10 a maximum peak positive gate voltage + v gm 20 v maximum peak negative gate voltage - v gm 5 maximum dc gate currrent required to trigger i gt t j = 25 c, v a = 12 v, r a = 6 ? 200 ma maximum dc gate voltag e required to trigger v gt 3v maximum dc gate curr ent not to trigger i gd t j = t j maximum, rated v drm applied 20 ma maximum dc gate volt age not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating juncti on temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance , junction to heatsink r thj-hs dc operation single side cooled 0.17 k/w dc operation double side cooled 0.08 maximum thermal resistance, case to heatsink r thc-hs dc operation single side cooled 0.033 dc operation double side cooled 0.017 mounting force, 10 % 4900 (500) n (kg) approximate weight 50 g case style see dimensions - link at the end of datasheet to-200ab (a-puk)
VS-ST183C series www.vishay.com vishay semiconductors revision: 17-dec-13 4 document number: 94368 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? the table above shows the increment of thermal resistance r thj-hs when devices operate at different conduction angles than dc ? ? fig. 1 - current ra tings characteristics fig. 2 - current ra tings characteristics fig. 3 - current ra tings characteristics fig. 4 - current ra tings characteristics ? r thj-hs conduction conduction angle sinusoidal conduction rectangular conduction test conditions units single side double side single side double side 180 0.015 0.016 0.011 0.011 t j = t j maximum k/w 120 0.018 0.019 0.019 0.019 90 0.024 0.024 0.026 0.026 60 0.035 0.035 0.036 0.037 30 0.060 0.060 0.060 0.061 0 200 240 average on-state current (a) 40 120 80 160 maximum allowable heatsink temperature (c) 80 90 110 120 130 st183c..c series (single side cooled) r thj-hs (dc) = 0.17 k/w cond u ction angle 70 60 50 40 100 ? 30 60 90 120 180 0 250 350 400 average on-state current (a) 50 150 100 200 maximum allowable heatsink temperature (c) 80 90 110 120 130 st183c..c series (single side cooled) r thj-hs (dc) = 0.17 k/w ? cond u ction period 70 60 50 40 30 20 100 300 30 60 120 180 dc 90 0 350 400 450 150 250 200 300 maximum allowable heatsink temperature (c) 80 90 110 120 130 st183c..c series (do ub le side cooled) r thj-hs (dc) = 0.08 k/w cond u ction angle 70 60 50 40 30 100 100 50 ? 30 60 90 120 180 average on-state current (a) 0 500 600 700 average on-state current (a) 100 300 200 400 maximum allowable heatsink temperature (c) 80 90 110 120 130 st183c..c series (do ub le side cooled) r thjc (dc) = 0.08 k/w ? cond u ction period 70 60 50 40 30 20 100 30 60 90 120 180 dc
VS-ST183C series www.vishay.com vishay semiconductors revision: 17-dec-13 5 document number: 94368 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - on-state powe r loss characteristics fig. 6 - on-state powe r loss characteristics fig. 7 - maximum non-re petitive surge current single and double side cooled fig. 8 - maximum non-re petitive surge current single and double side cooled fig. 9 - on-state volt age drop characteristics fig. 10 - thermal impedance z thjc characteristics average on-state current (a) maximum average on-state power loss (w) 0 350 400 450 150 100 50 250 200 300 0 100 200 300 400 500 600 700 800 900 1000 st183c..c series t j = 125 c cond u ction angle rms limit ? 180 120 90 60 30 average on-state current (a) maximum average on-state power loss (w) 0 500 600 700 100 300 200 400 0 200 400 600 800 1000 1200 1400 st183c..c series t j = 125 c cond u ction period rms limit dc 180 120 90 60 30 ? 2000 peak half sine wave on-state current (a) number of equal amplitude half cycle current pulses (n) 1 10 100 4500 4000 3500 3000 2500 st183c..c series at any rated load condition and w ith rated v rrm applied follo w ing s u rge. initial t j = 125 c at 60 hz 0.0083 s at 50 hz 0.0100 s 2000 peak half sine wave on-state current (a) pulse train duration (s) 0.01 0.1 1 5000 4500 4000 3500 3000 2500 st183c..c series maxim u m non-repetiti v e s u rge c u rrent v ers u s p u lse train d u ration. control of cond u ction may not b e maintained. initial t j = 125 c no v oltage reapplied rated v rrm reapplied 100 1000 instantaneous on-state voltage (a) instantaneous on-state voltage (v) st183c..c series 1.5 1 2 2.5 4.5 10 000 3.5 34 t j = 25 c t j = 125 c 0.001 0.01 0.1 z thj-hs - transient themal impedance (k/w) square wave pulse duration (s) st183c..c series 0.01 0.001 0.1 1 10 1 steady state v al u e r thj-hs = 0.17 k/w (single side cooled) r thj-hs = 0.08 k/w (do ub le side cooled) (dc operation)
VS-ST183C series www.vishay.com vishay semiconductors revision: 17-dec-13 6 document number: 94368 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 11 - reverse recovered charge characteristics fig. 12 - reverse recovery current characteristics fig. 13 - frequency characteristics fig. 14 - frequency characteristics 0 50 100 150 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of on-state current (a/s) st183c..c series t j = 125 c 20 0 406080100 250 200 i tm = 500 a 300 a 200 a 100 a 50 a 0 20 40 60 80 100 120 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) st183c..c series t j = 125 c 20 0 406080100 140 160 i tm = 500 a i tm = 300 a i tm = 200 a i tm = 100 a i tm = 50 a 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) 3000 st183c..c series sin u soidal p u lse t c = 40 c 50 hz 5000 t p 10 000 2500 1000 1500 400 200 100 500 sn ubb er circ u it r s = 47 c s = 0.22 f v d = 80 % v drm 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) 3000 st183c..c series sin u soidal p u lse t c = 55 c 50 hz 5000 t p 10 000 2500 1500 1000 400 200 100 500 sn ubb er circ u it r s = 47 c s = 0.22 f v d = 80 % v drm 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) 3000 st183c..c series trapezoidal p u lse t c = 40 c di/dt = 50 a/s t p sn ubb er circ u it r s = 47 c s = 0.22 f v d = 80 % v drm 2500 50 hz 5000 1500 1000 200 400 100 500 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) 3000 st183c..c series trapezoidal p u lse t c = 55 c di/dt = 50 a/s t p sn ubb er circ u it r s = 47 c s = 0.22 f v d = 80 % v drm 2500 50 hz 5000 1500 1000 200 400 100 500
VS-ST183C series www.vishay.com vishay semiconductors revision: 17-dec-13 7 document number: 94368 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 15 - frequency characteristics fig. 16 - maximum on-state en ergy power loss characteristics fig. 17 - gate characteristics 10 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) 3000 st183c..c series trapezoidal p u lse t c = 40 c di/dt = 100 a/s t p sn ubb er circ u it r s = 47 c s = 0.22 f v d = 80 % v drm 10 000 2500 1500 1000 500 400 200 100 50 hz 5000 10 10 100 1000 10 000 100 1000 10 000 pulse basewidth (s) peak on-state current (a) 3000 st183c..c series trapezoidal p u lse t c = 55 c di/dt = 100 a/s t p sn ubb er circ u it r s = 47 c s = 0.22 f v d = 80 % v drm 10 000 5000 2500 1500 1000 500 400 200 100 50 hz pulse basewidth (s) 20 jo u les per p u lse 0.5 0.3 0.2 peak on-state current (a) 10 100 1000 10 000 10 100 1000 10 000 t p st183c..c series sin u soidal p u lse 0.1 2 100 000 1 4 10 pulse basewidth (s) peak on-state current (a) 10 100 1000 10 000 10 100 1000 10 000 100 000 0.1 0.2 0.5 2 1 4 10 20 jo u les per p u lse t p st183c..c series rectang u lar p u lse di/dt = 50 a/s 0.3 0.1 1 10 100 0.001 instantaneous gate current (a) instantaneous gate voltage (v) 0.01 0.1 1 10 100 ( b ) v gd i gd (1) (2) (3) de v ice: st183c..c series (4) freq u ency limited b y p g(a v ) (1) p gm = 10 w, t p = 20 ms (2) p gm = 20 w, t p = 10 ms (3) p gm = 40 w, t p = 5 ms (4) p gm = 60 w, t p = 3.3 ms rectang u lar gate p u lse a) recommended load line for rated di/dt: 20 v , 10 ; t r 1 s b ) recommended load line for 30 % rated di/dt: 10 v , 10 t r 1 s (a) t j = 40 c t j = 25 c t j = 125 c
VS-ST183C series www.vishay.com vishay semiconductors revision: 17-dec-13 8 document number: 94368 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions www.vishay.com/doc?95074 1 - thyristor 2 - essential part number 3 - 3 = fast turn-off 4 - c = ceramic puk 5 - voltage code x 100 = v rrm (see voltage ratings table) 6 - c = puk case to-200ab (a-puk) 7 - reapplied dv/dt code (for t q test condition) 8 -t q code 9 dv/dt - t q combinations available dv/dt (v/s) 20 50 100 200 400 10 12 15 18 20 cn cm cl cp ck dn dm dl dp dk fl* fm fn* ek ep el em en hp hl hm fk fp hk hn t q (s) * standard part number. all other types available only on request. device code 5 1 3 2 4 6 7 8 9 st vs- 18 3 c 08 c h k - vishay semiconductors product
document number: 95074 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 01-aug-07 1 to-200ab (a-puk) outline dimensions vishay semiconductors dimensions in millimeters (inches) 4.75 (0.19) 28 (1.10) 6.5 (0.26) 19 (0.75) dia. max. 0.3 (0.01) min. 0.3 (0.01) min. 13.7/14.4 (0.54/0.57) 25 5 gate terminal for 1.47 (0.06) dia. pin receptacle 19 (0.75) dia. max. 38 (1.50) dia max. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 42 (1.65) max. anode to gate creepage distance: 7.62 (0.30) minimum strike distance: 7.12 (0.28) minimum quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification)
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